STMicroelectronics, Inc. Single IGBTs STGWA50M65DF2

Description
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247 Long Leads
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247 Long Leads
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-16973-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-16973-ND
Single IGBTs 497-16973-ND
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247 Long Leads

IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247 Long Leads

Buy Now Datasheet
Single IGBTs - STGWA50M65DF2 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGWA50M65DF2
Single IGBTs STGWA50M65DF2
TRENCH GATE FIELD-STOP IGBT M SE

TRENCH GATE FIELD-STOP IGBT M SE

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277358-STGWA50M65DF2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277358-STGWA50M65DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277358-STGWA50M65DF2
Win Source Part Number: 1277358-STGWA50M65DF 2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 600 Power - Max: 375 W Reverse Recovery Time (trr): 162 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Switching Energy: 880µJ (on), 1.57mJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 42ns/130ns Test Condition: 400V, 50A, 6.8Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16973 Base Product Number: STGWA50

Win Source Part Number: 1277358-STGWA50M65DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: M
Package: Tube
Standard Package: 600
Power - Max: 375 W
Reverse Recovery Time (trr): 162 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Switching Energy: 880µJ (on), 1.57mJ (off)
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 42ns/130ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16973
Base Product Number: STGWA50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGWA50M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWA50M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGWA50M65DF2
TRENCH GATE FIELD-STOP IGBT M SE

TRENCH GATE FIELD-STOP IGBT M SE

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGWA50M65DF2
IGBT Transistors STGWA50M65DF2
IGBT Transistors PTD HIGH VOLTAGE

IGBT Transistors PTD HIGH VOLTAGE

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-16973-ND STGWA50M65DF2 1277358-STGWA50M65DF2 STGWA50M65DF2 STGWA50M65DF2
Product Name Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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