Trans IGBT Chip N-CH 650V 100A 300000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGWA50IH65DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 100A, 300000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 100A, 300000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA50IH65DF can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 100A 300W Through Hole TO-247 Long Leads
TRENCH GATE FIELD-STOP IGBT 650
Win Source Part Number: 1277368-STGWA50IH65D
Category: Discrete Semiconductor Products>Transistors
Series: IH
Package: Tube
Standard Package: 600
Power - Max: 300 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Switching Energy: 284µJ (off)
Input Type: Standard
Gate Charge: 158 nC
Td (on/off) @ 25°C: -/260ns
Test Condition: 400V, 50A, 22Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18498
Base Product Number: STGWA50
IGBT, 650V, 100A, 300W, TO-247; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes
TRENCH GATE FIELD-STOP IGBT 650
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGWA50IH65DF | 497-18498-ND | STGWA50IH65DF | 1277368-STGWA50IH65DF | 99AC0599 | STGWA50IH65DF | STGWA50IH65DF |
| Product Name | 650V 100A 300000mW IGBT Transistor | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Igbt, 650V, 100A, 300W, To-247; Dc Collector Current Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
