IGBT 1200V 80A 468W TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 814058-STGWA40M120DF
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 468W
Reverse Recovery Time (trr): 355ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 1.03mJ (on), 480μJ (off)
Input Type: Standard
Gate Charge: 125nC
Test Condition: 600V, 40A, 10Ohm, 15V
Supplier Device Package: TO-247
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.3V at 15V, 40A
Td (on/off) at 25°C: 35ns/140ns
Part Number Series: STGWA40
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGWA40M120DF3 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 80A, 468000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 80A, 468000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA40M120DF3 can be used for catalog matching and distributor lookup.
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IGBT 1200V 80A 468W TO-247-3
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGWA40M120DF3 | 814058-STGWA40M120DF3 | 279-STGWA40M120DF3 | 497-STGWA40M120DF3-ND | STGWA40M120DF3 | 761-STGWA40M120DF3 | STGWA40M120DF3 |
| Product Name | Single IGBTs | IGBTs - Single - STGWA40M120DF3 | 1200V 80A 468000mW IGBT Transistor | Single IGBTs | IGBT Transistors | STMICROELECTRONICS STGWA40M120DF3 IGBT Single Transistor, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | ||||
| VCES | 1200 volts | ||||||
| Packing Method | Tube; Tube | Tube | Tube; Tube | Tube; Tube | |||
| Structure | Trench Field Stop |
