IGBT Trench Field Stop 650V 72A 230W Through Hole TO-247 Long Leads
Win Source Part Number: 1216805-STGWA40H65DF
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 230 W
Reverse Recovery Time (trr): 75 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 72 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Switching Energy: 765µJ (on), 410µJ (off)
Input Type: Standard
Gate Charge: 153 nC
Td (on/off) @ 25°C: 18ns/72ns
Test Condition: 400V, 40A, 4.7Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-19785
Base Product Number: STGWA40
TRENCH GATE FIELD-STOP 650 V 40
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package Product overview: STGWA40H65DFB2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 40 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 40 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA40H65DFB2 can be used for catalog matching and distributor lookup.
IGBT, 650V, 72A, 175DEG C, 230W ROHS COMPLIANT: YES
TRENCH GATE FIELD-STOP 650 V 40
IGBT Transistors Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-19785-ND | 1216805-STGWA40H65DFB2 | STGWA40H65DFB2 | 279-STGWA40H65DFB2 | 69AH2737 | STGWA40H65DFB2 | STGWA40H65DFB2 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | 650 V 40 A IGBT Transistor | Igbt, 650V, 72A, 175Deg C, 230W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
