Manufacturer: STMicroelectronics
Win Source Part Number: 795621-STGWA30N120KD
Series: PowerMESH
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TJ)
Package: TO-247-3
Power - Max: 220W
Reverse Recovery Time (trr): 84ns
Current - Collector Pulsed (Icm): 100A
Switching Energy: 2.4mJ (on), 4.3mJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 36ns/251ns
Test Condition: 960V, 20A, 10 Ohm, 15V
Family Name: STGWA30N120KD
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 3.85V @ 15V, 20A
Alternative Parts (Cross-Reference): IRG4PH50UDPBF; IXGH20N120B; HGTG11N120CN_NL; IRG4PH50K; IRG4PH50KD; IRG4PH50UD; SGW25N120E8161XK ;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
IGBT 1200V 60A 220W Through Hole TO-247
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Product overview: STGWA30N120KD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 A, 1200 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 30 A, 1200 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA30N120KD can be used for catalog matching and distributor lookup.
IGBT Transistors 30A 1200V short circuit rugged IGBT
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| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 795621-STGWA30N120KD | STGWA30N120KD-ND | 279-STGWA30N120KD | STGWA30N120KD | 761-STGWA30N120KD | STGWA30N120KD |
| Product Name | IGBTs - Single - STGWA30N120KD | Single IGBTs | 30 A 1200 V IGBT Transistor | IGBT Transistors | Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 1200 volts | |||||
| TJ | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 C (-67 F) | -55 to 125 C (-67 to 257 F) | ||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | ||||
| Packing Method | Tube; Tube | Tube | Tube; Tube | Tube; Tube | ||
| PD | 220000 milliwatts | 220000 milliwatts |