IGBT Trench Field Stop 650V 60A 258W Through Hole TO-247 Long Leads
Manufacturer: STMicroelectronics
Win Source Part Number: 1261058-STGWA30M65DF
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 300μJ (on), 960μJ (off)
Input Type: Standard
Gate Charge: 80nC
Test Condition: 400V, 30A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Maximum Power: 258W
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 30A
Td (on/off) at 25°C: 31.6ns/115ns
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGWA30M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 60A, 258000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 60A, 258000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA30M65DF2 can be used for catalog matching and distributor lookup.
IGBT 650V 30A TO247-3
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-15842-5-ND | 1261058-STGWA30M65DF2 | 279-STGWA30M65DF2 | STGWA30M65DF2 | STGWA30M65DF2 | 52Y7737 |
| Product Name | Single IGBTs | IGBTs - Single - STGWA30M65DF2 | 650V 60A 258000mW IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant Stmicroelectronics |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
