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STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - IGBTs STGWA30M65DF2

Description
IGBT 650V 30A Trench Low Loss TO-247 - Discrete Semiconductors - IGBT Transistors Delivery on production packaging - Tube. This product is non-returnable.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 9062824P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT 650V 30A Trench Low Loss TO-247 - Discrete Semiconductors - IGBT Transistors Delivery on production packaging - Tube. This product is non-returnable.

IGBT 650V 30A Trench Low Loss TO-247 - Discrete Semiconductors - IGBT Transistors
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9062824 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT 650V 30A Trench Low Loss TO-247 - Discrete Semiconductors - IGBT Transistors

IGBT 650V 30A Trench Low Loss TO-247 - Discrete Semiconductors - IGBT Transistors

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - STGWA30M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWA30M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGWA30M65DF2
IGBT 650V 30A TO247-3

IGBT 650V 30A TO247-3

Supplier's Site
IGBTs - Single - STGWA30M65DF2 - 1261058-STGWA30M65DF2 - Win Source Electronics
Yishun, Singapore
IGBTs - Single - STGWA30M65DF2
1261058-STGWA30M65DF2
IGBTs - Single - STGWA30M65DF2 1261058-STGWA30M65DF2
Manufacturer: STMicroelectronics Win Source Part Number: 1261058-STGWA30M65DF 2 Packaging: Tube Mounting Style: Through Hole Reverse Recovery Time (trr): 140ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 120A Switching Energy: 300μJ (on), 960μJ (off) Input Type: Standard Gate Charge: 80nC Test Condition: 400V, 30A, 10Ohm, 15V Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Long Leads Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Current - Collector (Ic) (Maximum): 60A Voltage - Collector Emitter Breakdown (Maximum): 650V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Maximum Power: 258W Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 30A Td (on/off) at 25°C: 31.6ns/115ns

Manufacturer: STMicroelectronics
Win Source Part Number: 1261058-STGWA30M65DF2
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 300μJ (on), 960μJ (off)
Input Type: Standard
Gate Charge: 80nC
Test Condition: 400V, 30A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Maximum Power: 258W
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 30A
Td (on/off) at 25°C: 31.6ns/115ns

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGWA30M65DF2
IGBT Transistors STGWA30M65DF2
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss

Supplier's Site Datasheet
Discrete Semiconductor - STGWA30M65DF2 - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
STGWA30M65DF2
Discrete Semiconductor STGWA30M65DF2
IGBT 650V 30A TO247-3

IGBT 650V 30A TO247-3

Supplier's Site Datasheet
Single IGBTs - 497-15842-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-15842-5-ND
Single IGBTs 497-15842-5-ND
IGBT Trench Field Stop 650V 60A 258W Through Hole TO-247 Long Leads

IGBT Trench Field Stop 650V 60A 258W Through Hole TO-247 Long Leads

Supplier's Site Datasheet
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant Stmicroelectronics - 52Y7737 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant Stmicroelectronics
52Y7737
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant Stmicroelectronics 52Y7737
IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 RoHS Compliant: Yes

IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Win Source Electronics VAST STOCK CO., LIMITED LIXINC Electronics Co., Limited DigiKey Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 9062824P STGWA30M65DF2 1261058-STGWA30M65DF2 STGWA30M65DF2 STGWA30M65DF2 497-15842-5-ND 52Y7737
Product Name Discrete Semiconductor Products - Transistors - IGBTs IGBTs - Single - STGWA30M65DF2 IGBT Transistors Discrete Semiconductor Single IGBTs Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant Stmicroelectronics
Polarity N-Channel
IC(max) 60 amps
PD 258000 milliwatts
Package Type TO-247; TO-247 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
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