The IGBT, part number STGWA20IH65DF, is a 650V, 40A device designed for soft-commutation applications. It features a trench gate field-stop structure that optimizes conduction and switching losses, making it suitable for resonant converters and induction heating applications. The maximum junction temperature is rated at 175 ¬8C, with a collector-emitter saturation voltage (VCE(sat)) of 1.55 V at 20 A. The device includes a low drop voltage freewheeling diode and has a thermal resistance of 0.94 ¬8C/W from junction to case. It supports a continuous collector current of 40 A at 25 ¬8C and has a pulsed collector current rating of 60 A. The IGBT is housed in a TO-247 long leads package and is RoHS compliant.
IGBT, 650V, 40A, TO-247LL ROHS COMPLIANT: YES
TRENCH GATE FIELD-STOP 650 V, 20
| Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 91AH9103 | STGWA20IH65DF |
| Product Name | Igbt, 650V, 40A, To-247Ll Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-3; TO-247 |
