Win Source Part Number: 1376609-STGWA20H65DF
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Series: HB2
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Base Product Number: STGWA20
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 215 ns
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 147 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Switching Energy: 265µJ (on), 214µJ (off)
Gate Charge: 56 nC
Td (on/off) @ 25°C: 16ns/78.8ns
TRENCH GATE FIELD-STOP 650 V, 20 Product overview: STGWA20H65DFB2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA20H65DFB2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 40A 147W Through Hole TO-247 Long Leads
TRENCH GATE FIELD-STOP 650 V, 20
IGBT, 650V, 40A, TO-247 ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1376609-STGWA20H65DFB2 | 279-STGWA20H65DFB2 | 497-STGWA20H65DFB2-ND | 2067209 | STGWA20H65DFB2 | 89AH1341 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | 650 V IGBT Transistor | Single IGBTs | IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 40A, To-247 Rohs Compliant Stmicroelectronics |
| Package Type | TO-247; SOT3 | Tube | TO-247; TO-247-3 | TO-247; To-247 | TO-3; TO-247 | |
| PD | 147 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |