STMicroelectronics, Inc. Single IGBTs STGWA19NC60HD

Description
IGBT 600V 52A 208W TO247
Request a Quote Datasheet
Description
IGBT 600V 52A 208W TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGWA19NC60HD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGWA19NC60HD
Single IGBTs STGWA19NC60HD
IGBT 600V 52A 208W TO247

IGBT 600V 52A 208W TO247

Supplier's Site Datasheet
IGBTs - Single - STGWA19NC60HD - 066389-STGWA19NC60HD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGWA19NC60HD
066389-STGWA19NC60HD
IGBTs - Single - STGWA19NC60HD 066389-STGWA19NC60HD
Manufacturer: STMicroelectronics Win Source Part Number: 066389-STGWA19NC60HD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 53nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 52A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 208W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A Total Switching Energy(Ets): 85μJ (on), 189μJ (off) Turn-on and Turn-off delay time: 25ns/97ns Testing Conditions: 390V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Alternative Energy, Industrial

Manufacturer: STMicroelectronics
Win Source Part Number: 066389-STGWA19NC60HD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 53nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 52A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 208W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A
Total Switching Energy(Ets): 85μJ (on), 189μJ (off)
Turn-on and Turn-off delay time: 25ns/97ns
Testing Conditions: 390V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Alternative Energy, Industrial

Buy Now Datasheet
Single IGBTs - 497-11088-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-11088-5-ND
Single IGBTs 497-11088-5-ND
IGBT 600V 52A 208W Through Hole TO-247 Long Leads

IGBT 600V 52A 208W Through Hole TO-247 Long Leads

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGWA19NC60HD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWA19NC60HD
Discrete Semiconductor Products - Transistors - IGBTs STGWA19NC60HD
IGBT 600V 52A 208W TO247

IGBT 600V 52A 208W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGWA19NC60HD
IGBT Transistors STGWA19NC60HD
IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode

IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGWA19NC60HD 066389-STGWA19NC60HD 497-11088-5-ND STGWA19NC60HD STGWA19NC60HD
Product Name Single IGBTs IGBTs - Single - STGWA19NC60HD Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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