STMicroelectronics, Inc. 650 V 100 A IGBT Transistor STGWA100H65DFB2

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package Product overview: STGWA100H65DFB2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 100 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 100 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA100H65DFB2 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1376623-STGWA100H65DFB2
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
Mfr: STMicroelectronics
Series: HB2
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Base Product Number: STGWA100
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 100A, 2.2Ohm, 15V
Reverse Recovery Time (trr): 123 ns
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 441 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Switching Energy: 2.2mJ (on), 1.4mJ (off)
Gate Charge: 288 nC
Td (on/off) @ 25°C: 30ns/130ns

TRENCH GATE FIELD-STOP, 650 V, 1

IGBT Trench Field Stop 650V 145A 441W Through Hole TO-247 Long Leads