Win Source Part Number: 1277364-STGW8M120DF3
Category: Discrete Semiconductor Products>Transistors
Series: M
Package: Tube
Standard Package: 30
Power - Max: 167 W
Reverse Recovery Time (trr): 103 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 16 A
Current - Collector Pulsed (Icm): 32 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
Switching Energy: 390µJ (on), 370µJ (Off)
Input Type: Standard
Gate Charge: 32 nC
Td (on/off) @ 25°C: 20ns/126ns
Test Condition: 600V, 8A, 33Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-17619
Base Product Number: STGW8
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss Product overview: STGW8M120DF3 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 8 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V, 8 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW8M120DF3 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 1200V 16A 167W Through Hole TO-247-3
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
TRENCH GATE FIELD-STOP IGBT M SE
IGBT, SINGLE, 1.2KV, 16A, TO-247-3; Continuous Collector Current:16A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:167W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1277364-STGW8M120DF3 | 279-STGW8M120DF3 | 497-17619-ND | STGW8M120DF3 | STGW8M120DF3 | 38AC2424 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | 1200 V 8 A IGBT Transistor | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 1.2Kv, 16A, To-247-3; Continuous Collector Current Stmicroelectronics |
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 |
