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IGBT 600V 120A 469W TO247
IGBT Transistors Trench gate V series 600V 80A HiSpd
Manufacturer: STMicroelectronics
Win Source Part Number: 1261056-STGW80V60DF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3 Exposed Pad
Power - Max: 469W
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 1.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 448nC
Td (on/off) @ 25°C: 60ns/220ns
Test Condition: 400V, 80A, 5 Ohm, 15V
Family Name: STGW80V60DF
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 120A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 80A
Alternative Parts (Cross-Reference): IXXH50N60C3; IXGH50N60C4; APT30GP60B;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
IGBT N-Ch 600V 80A High-Speed TO247 - Discrete Semiconductors - IGBT Transistors
IGBT N-Ch 600V 80A High-Speed TO247 - Discrete Semiconductors - IGBT Transistors
IGBT N-Ch 600V 80A High-Speed TO247 - Discrete Semiconductors - IGBT Transistors
Delivery on production packaging - Tube. This product is non-returnable.
IGBT Trench Field Stop 600V 120A 469W Through Hole TO-247
IGBT, SINGLE, 600V, 120A, TO-247-3; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes
| Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Win Source Electronics | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW80V60DF | STGW80V60DF | 1261056-STGW80V60DF | 7925827 | 497-14058-5-ND | 98Y2478 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBTs - Single - STGW80V60DF | Single IGBTs | Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current Stmicroelectronics | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Packing Method | Tube; Tube | Tube | ||||
| Package Type | TO-247; SOT3 | TO-247; TO-247 | TO-247; TO-247-3 Exposed Pad | TO-3; TO-247 | ||
| Polarity | N-Channel |
