STMicroelectronics, Inc. 650 V 80 A IGBT Transistor STGW80H65FB

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Product overview: STGW80H65FB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 80 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 80 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW80H65FB can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 795620-STGW80H65FB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 469W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10 Ohm, 15V
Family Name: STGW80H65FB
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 120A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 80A
Alternative Parts (Cross-Reference): IRG4PSC71K; IXXR110N65B4H1; IRGP4760DPbF; IRGP4760D-EPbF;
Introduction Date: June 13, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-3