Trench gate field-stop 650 V, 80 A high speed HB series IGBT Product overview: STGW80H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 80 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 80 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW80H65DFB can be used for catalog matching and distributor lookup.
IGBT 650V 120A 469W TO-247
IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247
Manufacturer: STMicroelectronics
Win Source Part Number: 734759-STGW80H65DFB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 469W
Reverse Recovery Time (trr): 85ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10 Ohm, 15V
Family Name: STGW80H65DFB
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 120A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 80A
Alternative Parts (Cross-Reference): IRGP4760DPbF; IXXH60N65B4; IRGP4760D-EPbF;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
IGBT, SINGLE, 650V, 120A, TO-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT Transistors Trench gte FieldStop IGBT 650V 80A
IGBT 650V 120A 469W TO-247
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW80H65DFB | STGW80H65DFB | 497-14368-ND | 734759-STGW80H65DFB | 45AC7608 | STGW80H65DFB | STGW80H65DFB |
| Product Name | 650 V 80 A IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - STGW80H65DFB | Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 469000 milliwatts | 469000 milliwatts |
