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IGBT 650V 120A 469W TO-247
IGBT 650V 120A 469W TO-247
IGBT Transistors Trench gte FieldStop IGBT 650V 80A
Manufacturer: STMicroelectronics
Win Source Part Number: 734759-STGW80H65DFB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 469W
Reverse Recovery Time (trr): 85ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10 Ohm, 15V
Family Name: STGW80H65DFB
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 120A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 80A
Alternative Parts (Cross-Reference): IRGP4760DPbF; IXXH60N65B4; IRGP4760D-EPbF;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247
IGBT N-Ch 650V 80A High-Speed TO247 - Discrete Semiconductors - IGBT Transistors
Delivery on production packaging - Tube. This product is non-returnable.
IGBT N-Ch 650V 80A High-Speed TO247 - Discrete Semiconductors - IGBT Transistors
IGBT, SINGLE, 650V, 120A, TO-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| LIXINC Electronics Co., Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Win Source Electronics | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW80H65DFB | STGW80H65DFB | STGW80H65DFB | 734759-STGW80H65DFB | 497-14368-ND | 7925814P | 45AC7608 |
| Product Name | Discrete Semiconductor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBTs - Single - STGW80H65DFB | Single IGBTs | Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247 | TO-3; TO-247 | ||
| Packing Method | Tube; Tube | Tube; Tube | Tube | ||||
| Structure | Trench Field Stop | Trench Field Stop |
