STMicroelectronics, Inc. Single IGBTs STGW80H65DFB

Description
IGBT 650V 120A 469W TO-247
  • Single IGBTs - STGW80H65DFB - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single IGBTs - 497-14368-ND - DigiKey
    DigiKey
  • IGBTs - Single - STGW80H65DFB - 734759-STGW80H65DFB - Win Source Electronics
    Win Source Electronics
  • Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics - 45AC7608 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGW80H65DFB - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT 650V 120A 469W TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGW80H65DFB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW80H65DFB
Single IGBTs STGW80H65DFB
IGBT 650V 120A 469W TO-247

IGBT 650V 120A 469W TO-247

Supplier's Site Datasheet
Single IGBTs - 497-14368-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-14368-ND
Single IGBTs 497-14368-ND
IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247

IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247

Buy Now Datasheet
IGBTs - Single - STGW80H65DFB - 734759-STGW80H65DFB - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW80H65DFB
734759-STGW80H65DFB
IGBTs - Single - STGW80H65DFB 734759-STGW80H65DFB
Manufacturer: STMicroelectronics Win Source Part Number: 734759-STGW80H65DFB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 469W Reverse Recovery Time (trr): 85ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 240A Switching Energy: 2.1mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 414nC Td (on/off) @ 25°C: 84ns/280ns Test Condition: 400V, 80A, 10 Ohm, 15V Family Name: STGW80H65DFB Categories: Discrete Semiconductor Products Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Current - Collector (Ic) (Maximum): 120A Voltage - Collector Emitter Breakdown (Maximum): 650V Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 80A Alternative Parts (Cross-Reference): IRGP4760DPbF; IXXH60N65B4; IRGP4760D-EPbF; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 734759-STGW80H65DFB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 469W
Reverse Recovery Time (trr): 85ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10 Ohm, 15V
Family Name: STGW80H65DFB
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 120A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 80A
Alternative Parts (Cross-Reference): IRGP4760DPbF; IXXH60N65B4; IRGP4760D-EPbF;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics - 45AC7608 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics
45AC7608
Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics 45AC7608
IGBT, SINGLE, 650V, 120A, TO-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

IGBT, SINGLE, 650V, 120A, TO-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGW80H65DFB
IGBT Transistors STGW80H65DFB
IGBT Transistors Trench gte FieldStop IGBT 650V 80A

IGBT Transistors Trench gte FieldStop IGBT 650V 80A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW80H65DFB - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW80H65DFB
Discrete Semiconductor Products - Transistors - IGBTs STGW80H65DFB
IGBT 650V 120A 469W TO-247

IGBT 650V 120A 469W TO-247

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGW80H65DFB 497-14368-ND 734759-STGW80H65DFB 45AC7608 STGW80H65DFB STGW80H65DFB
Product Name Single IGBTs Single IGBTs IGBTs - Single - STGW80H65DFB Igbt, Single, 650V, 120A, To-247; Continuous Collector Current Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) ? to 175 C (? to 347 F) -55 to 175 C (-67 to 347 F)
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