Trench gate field-stop 650 V, 80 A high speed HB series IGBT Product overview: STGW80H65DFB-4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 80 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 80 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW80H65DFB-4 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-4
Win Source Part Number: 996581-STGW80H65DFB-
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 469 W
Reverse Recovery Time (trr): 85 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414 nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGW80
469W 120A 650V FS(Field Stop) TO-247-4 IGBTs ROHS
IGBT BIPO 650V 80A TO247
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
IGBT BIPO 650V 80A TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW80H65DFB-4 | STGW80H65DFB-4-ND | 996581-STGW80H65DFB-4 | STGW80H65DFB-4 | STGW80H65DFB-4 | STGW80H65DFB-4 | STGW80H65DFB-4 |
| Product Name | 650 V 80 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Triode/MOS Tube/Transistor >> IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; TO-247-4 | TO-247; SOT3 | TO-247 | TO-247; TO-247-4 | |||
| Packing Method | Tube | Tube; Tube |