STMicroelectronics, Inc. IGBT STGW75M65DF2

Description
INSULATED GATE BIPOLAR TRANSISTOR, 120A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, MARKING: G75M65DF2. FREE 2 YEAR RADWELL WARRANTY
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Description
INSULATED GATE BIPOLAR TRANSISTOR, 120A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, MARKING: G75M65DF2. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT - 110218472 - Radwell International
Willingboro, NJ, United States
INSULATED GATE BIPOLAR TRANSISTOR, 120A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, MARKING: G75M65DF2. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 120A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, MARKING: G75M65DF2. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single IGBTs - STGW75M65DF2 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW75M65DF2
Single IGBTs STGW75M65DF2
TRENCH GATE FIELD-STOP IGBT M SE

TRENCH GATE FIELD-STOP IGBT M SE

Supplier's Site Datasheet
Single IGBTs - 497-16974-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-16974-ND
Single IGBTs 497-16974-ND
IGBT Trench Field Stop 650V 120A 468W Through Hole TO-247-3

IGBT Trench Field Stop 650V 120A 468W Through Hole TO-247-3

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Discrete Semiconductor Products - Transistors - IGBTs - Single - 1217277-STGW75M65DF2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1217277-STGW75M65DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single 1217277-STGW75M65DF2
Win Source Part Number: 1217277-STGW75M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 600 Power - Max: 468 W Reverse Recovery Time (trr): 165 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Switching Energy: 690µJ (on), 2.54mJ (off) Input Type: Standard Gate Charge: 225 nC Td (on/off) @ 25°C: 47ns/125ns Test Condition: 400V, 75A, 3.3Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16974 Base Product Number: STGW75

Win Source Part Number: 1217277-STGW75M65DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: M
Package: Tube
Standard Package: 600
Power - Max: 468 W
Reverse Recovery Time (trr): 165 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Switching Energy: 690µJ (on), 2.54mJ (off)
Input Type: Standard
Gate Charge: 225 nC
Td (on/off) @ 25°C: 47ns/125ns
Test Condition: 400V, 75A, 3.3Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16974
Base Product Number: STGW75

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW75M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW75M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGW75M65DF2
TRENCH GATE FIELD-STOP IGBT M SE

TRENCH GATE FIELD-STOP IGBT M SE

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGW75M65DF2
IGBT Transistors STGW75M65DF2
IGBT Transistors PTD HIGH VOLTAGE

IGBT Transistors PTD HIGH VOLTAGE

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Technical Specifications

  Radwell International ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 110218472 STGW75M65DF2 497-16974-ND 1217277-STGW75M65DF2 STGW75M65DF2 STGW75M65DF2
Product Name IGBT Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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