Win Source Part Number: 1353878-STGW75H65DFB
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Series: HB2
Package: Tube
Product Status: Active
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Base Product Number: STGW75
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 88 ns
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 357 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Switching Energy: 992µJ (on), 766µJ (off)
Gate Charge: 207 nC
Td (on/off) @ 25°C: 22ns/121ns
TRENCH GATE FIELD-STOP, 650 V, 7 Product overview: STGW75H65DFB2-4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW75H65DFB2-4 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 115A 357W Through Hole TO-247-4
IGBT, 650V, 115A, TO-247 ROHS COMPLIANT: YES
TRENCH GATE FIELD-STOP, 650 V, 7
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1353878-STGW75H65DFB2-4 | 279-STGW75H65DFB2-4 | 497-STGW75H65DFB2-4-ND | 2068629P | 2068629 | 91AH9106 | STGW75H65DFB2-4 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | 650 V IGBT Transistor | Single IGBTs | IGBTs | IGBTs | Igbt, 650V, 115A, To-247 Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 650 volts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; SOT3 | Tube | TO-247; TO-247-4 | TO-247; TO-247 | TO-247; To-247 | TO-3; TO-247 | |
| PD | 357 milliwatts |
