STMicroelectronics, Inc. IGBTs STGW60V60DF

Description
IGBT Trench gate,600V 60A/100 deg,TO247
Request a Quote Datasheet
Description
IGBT Trench gate,600V 60A/100 deg,TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Corby, Northants, United Kingdom
IGBTs
7917643
IGBTs 7917643
IGBT Trench gate,600V 60A/100 deg,TO247

IGBT Trench gate,600V 60A/100 deg,TO247

Supplier's Site
Corby, Northants, United Kingdom
IGBT Trench gate,600V 60A/100 deg,TO247

IGBT Trench gate,600V 60A/100 deg,TO247

Supplier's Site
Corby, Northants, United Kingdom
IGBTs
1687005
IGBTs 1687005
IGBT Trench gate,600V 60A/100 deg,TO247

IGBT Trench gate,600V 60A/100 deg,TO247

Supplier's Site
Single IGBTs - STGW60V60DF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW60V60DF
Single IGBTs STGW60V60DF
IGBT 600V 80A 375W TO247

IGBT 600V 80A 375W TO247

Supplier's Site Datasheet
Single IGBTs - 497-13768-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13768-5-ND
Single IGBTs 497-13768-5-ND
IGBT Trench Field Stop 600V 80A 375W Through Hole TO-247-3

IGBT Trench Field Stop 600V 80A 375W Through Hole TO-247-3

Buy Now Datasheet
IGBTs - Single - STGW60V60DF - 1103071-STGW60V60DF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW60V60DF
1103071-STGW60V60DF
IGBTs - Single - STGW60V60DF 1103071-STGW60V60DF
Manufacturer: STMicroelectronics Win Source Part Number: 1103071-STGW60V60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 74ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 334nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A Total Switching Energy(Ets): 750μJ (on), 550μJ (off) Turn-on and Turn-off delay time: 60ns/208ns Testing Conditions: 400V, 60A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1103071-STGW60V60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 74ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 334nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A
Total Switching Energy(Ets): 750μJ (on), 550μJ (off)
Turn-on and Turn-off delay time: 60ns/208ns
Testing Conditions: 400V, 60A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current Stmicroelectronics - 98Y2477 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current Stmicroelectronics
98Y2477
Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current Stmicroelectronics 98Y2477
IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGW60V60DF
IGBT Transistors STGW60V60DF
IGBT Transistors 600V 60A High Speed Trench Gate IGBT

IGBT Transistors 600V 60A High Speed Trench Gate IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW60V60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW60V60DF
Discrete Semiconductor Products - Transistors - IGBTs STGW60V60DF
IGBT 600V 80A 375W TO247

IGBT 600V 80A 375W TO247

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
STGW60V60DF
Triode/MOS Tube/Transistor >> IGBTs STGW60V60DF
375W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS

375W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 7917643 STGW60V60DF 497-13768-5-ND 1103071-STGW60V60DF 98Y2477 STGW60V60DF STGW60V60DF STGW60V60DF
Product Name IGBTs Single IGBTs Single IGBTs IGBTs - Single - STGW60V60DF Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Triode/MOS Tube/Transistor >> IGBTs
Polarity N-Channel
IC(max) 60 amps
PD 375000 milliwatts 375000 milliwatts 375000 milliwatts 375000 milliwatts
Package Type TO-247; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-3; TO-247 240 A TO-247
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data