600V 60A Trench Gate Field-Stop IGBT, TO-247, High Speed Product overview: STGW60V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW60V60DF can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1103071-STGW60V60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 74ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 334nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A
Total Switching Energy(Ets): 750μJ (on), 550μJ (off)
Turn-on and Turn-off delay time: 60ns/208ns
Testing Conditions: 400V, 60A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
IGBT Trench gate,600V 60A/100 deg,TO247
IGBT Trench gate,600V 60A/100 deg,TO247
IGBT Trench gate,600V 60A/100 deg,TO247
IGBT Trench Field Stop 600V 80A 375W Through Hole TO-247-3
IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW60V60DF | 1103071-STGW60V60DF | 7917643 | 7917643P | 497-13768-5-ND | 98Y2477 | STGW60V60DF | STGW60V60DF | STGW60V60DF | STGW60V60DF |
| Product Name | 600V 60A IGBT Transistor | IGBTs - Single - STGW60V60DF | IGBTs | IGBTs | Single IGBTs | Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs | Triode/MOS Tube/Transistor >> IGBTs |
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| VCE(on) | 2.3 volts | |||||||||
| Package Type | TO-247; SOT3; TO-247 | TO-247; To-247 | TO-247; TO-247 | TO-247; TO-247-3 | TO-3; TO-247 | 240 A | TO-247; TO-247-3 | TO-247 |
