Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGW60H65FB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 80A, 375000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 80A, 375000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW60H65FB can be used for catalog matching and distributor lookup.
Win Source Part Number: 1096886-STGW60H65FB
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 375 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Switching Energy: 1.09mJ (on), 626µJ (off)
Input Type: Standard
Gate Charge: 306 nC
Td (on/off) @ 25°C: 51ns/160ns
Test Condition: 400V, 60A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): NGTB40N65IHL2WG; STGW40H65FB; IKW50N65H5FKSA1; STGW40H65DFB; NGTB30N65IHL2WG; FGH40T65SHDF-F155; STGW60H60DLFB;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-14037-5,497-140
Base Product Number: STGW60
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247
IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT 650V 80A 375W TO247
IGBT 650V 80A 375W TO247
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW60H65FB | 1096886-STGW60H65FB | 497-14037-5-ND | STGW60H65FB | 61AC2103 | STGW60H65FB | STGW60H65FB |
| Product Name | 650V 80A 375000mW IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | IGBT Transistors | Igbt, Single, 650V, 80A, To-247; Dc Collector Current Stmicroelectronics | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 375000 milliwatts | 375000 milliwatts | |||||
| TJ | -40 C (-40 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| VCES | 650 volts |
