Manufacturer: STMicroelectronics
Win Source Part Number: 066388-STGW60H65F
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 306nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A
Total Switching Energy(Ets): 1.09mJ (on), 626μJ (off)
Turn-on and Turn-off delay time: 51ns/160ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): IXXH50N60B3D1; STGW50NB60M; STGW45NC60WD;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Maintenance & Repair
60 A, 650 V field stop trench gate IGBT Product overview: STGW60H65F from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 A, 650 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 60 A, 650 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW60H65F can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 120A 360W Through Hole TO-247-3
IGBT 650V 120A 360W TO247
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 066388-STGW60H65F | 279-STGW60H65F | 497-12422-ND | STGW60H65F |
| Product Name | IGBTs - Single - STGW60H65F | 60 A 650 V IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.3 volts | |||
| PD | 375000 milliwatts | 360000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |