STMicroelectronics, Inc. IGBTs - Single - STGW60H65F STGW60H65F

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066388-STGW60H65F Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 306nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A Total Switching Energy(Ets): 1.09mJ (on), 626μJ (off) Turn-on and Turn-off delay time: 51ns/160ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Alternative Parts (Cross-Reference): IXXH50N60B3D1; STGW50NB60M; STGW45NC60WD; Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Maintenance & Repair
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066388-STGW60H65F Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 306nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A Total Switching Energy(Ets): 1.09mJ (on), 626μJ (off) Turn-on and Turn-off delay time: 51ns/160ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Alternative Parts (Cross-Reference): IXXH50N60B3D1; STGW50NB60M; STGW45NC60WD; Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Maintenance & Repair
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGW60H65F - 066388-STGW60H65F - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW60H65F
066388-STGW60H65F
IGBTs - Single - STGW60H65F 066388-STGW60H65F
Manufacturer: STMicroelectronics Win Source Part Number: 066388-STGW60H65F Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 306nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A Total Switching Energy(Ets): 1.09mJ (on), 626μJ (off) Turn-on and Turn-off delay time: 51ns/160ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Alternative Parts (Cross-Reference): IXXH50N60B3D1; STGW50NB60M; STGW45NC60WD; Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Maintenance & Repair

Manufacturer: STMicroelectronics
Win Source Part Number: 066388-STGW60H65F
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 306nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A
Total Switching Energy(Ets): 1.09mJ (on), 626μJ (off)
Turn-on and Turn-off delay time: 51ns/160ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): IXXH50N60B3D1; STGW50NB60M; STGW45NC60WD;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Maintenance & Repair

Buy Now Datasheet
Single IGBTs - 497-12422-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-12422-ND
Single IGBTs 497-12422-ND
IGBT Trench Field Stop 650V 120A 360W Through Hole TO-247-3

IGBT Trench Field Stop 650V 120A 360W Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW60H65F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW60H65F
Discrete Semiconductor Products - Transistors - IGBTs STGW60H65F
IGBT 650V 120A 360W TO247

IGBT 650V 120A 360W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 066388-STGW60H65F 497-12422-ND STGW60H65F
Product Name IGBTs - Single - STGW60H65F Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.3 volts
PD 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 150 C (-67 to 302 F)
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