STMicroelectronics, Inc. 60 A 650 V IGBT Transistor STGW60H65DRF

60 A, 650 V field stop trench gate IGBT with Ultrafast diode Product overview: STGW60H65DRF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 A, 650 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 60 A, 650 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW60H65DRF can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261055-STGW60H65DRF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 420W
Reverse Recovery Time (trr): 19ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 940μJ (on), 1.06mJ (off)
Input Type: Standard
Gate Charge: 217nC
Td (on/off) @ 25°C: 85ns/178ns
Test Condition: 400V, 60A, 10 Ohm, 15V
Family Name: STGW60H65DRF
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 120A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 60A
Alternative Parts (Cross-Reference): IXXH60N65C4; IXXH60N65B4H1; IXXH40N65B4;
Introduction Date: October 11, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

IGBT Trench Field Stop 650V 120A 420W Through Hole TO-247-3