IGBT 650V 80A 375W TO-247
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGW60H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 80A, 375000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 80A, 375000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW60H65DFB can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247
Manufacturer: STMicroelectronics
Win Source Part Number: 727289-STGW60H65DFB
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 1.09mJ (on), 626μJ (off)
Input Type: Standard
Gate Charge: 306nC
Test Condition: 400V, 60A, 5Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Maximum Power: 375W
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 60A
Td (on/off) at 25°C: 51ns/160ns
IGBT 650V 80A 375W TO-247
IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors 600V 60A trench gate field-stop IGBT
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW60H65DFB | 279-STGW60H65DFB | 497-STGW60H65DFB-ND | 727289-STGW60H65DFB | STGW60H65DFB | 98Y2476 | STGW60H65DFB |
| Product Name | Single IGBTs | 650V 80A 375000mW IGBT Transistor | Single IGBTs | IGBTs - Single - STGW60H65DFB | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-3; TO-247 | |||
| PD | 375000 milliwatts | 375000 milliwatts |
