STMicroelectronics, Inc. Single IGBTs STGW60H65DFB

Description
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247
  • Single IGBTs - 497-STGW60H65DFB-ND - DigiKey
    DigiKey
  • IGBTs - Single - STGW60H65DFB - 727289-STGW60H65DFB - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - STGW60H65DFB - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current Stmicroelectronics - 98Y2476 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGW60H65DFB - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-STGW60H65DFB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-STGW60H65DFB-ND
Single IGBTs 497-STGW60H65DFB-ND
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247

IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247

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IGBTs - Single - STGW60H65DFB - 727289-STGW60H65DFB - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW60H65DFB
727289-STGW60H65DFB
IGBTs - Single - STGW60H65DFB 727289-STGW60H65DFB
Manufacturer: STMicroelectronics Win Source Part Number: 727289-STGW60H65DFB Packaging: Tube Mounting Style: Through Hole Reverse Recovery Time (trr): 60ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 240A Switching Energy: 1.09mJ (on), 626μJ (off) Input Type: Standard Gate Charge: 306nC Test Condition: 400V, 60A, 5Ohm, 15V Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-247-3 Current - Collector (Ic) (Maximum): 80A Voltage - Collector Emitter Breakdown (Maximum): 650V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Maximum Power: 375W Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 60A Td (on/off) at 25°C: 51ns/160ns

Manufacturer: STMicroelectronics
Win Source Part Number: 727289-STGW60H65DFB
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 1.09mJ (on), 626μJ (off)
Input Type: Standard
Gate Charge: 306nC
Test Condition: 400V, 60A, 5Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Maximum Power: 375W
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 60A
Td (on/off) at 25°C: 51ns/160ns

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Single IGBTs - STGW60H65DFB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW60H65DFB
Single IGBTs STGW60H65DFB
IGBT 650V 80A 375W TO-247

IGBT 650V 80A 375W TO-247

Supplier's Site Datasheet
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current Stmicroelectronics - 98Y2476 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current Stmicroelectronics
98Y2476
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current Stmicroelectronics 98Y2476
IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW60H65DFB - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW60H65DFB
Discrete Semiconductor Products - Transistors - IGBTs STGW60H65DFB
IGBT 650V 80A 375W TO-247

IGBT 650V 80A 375W TO-247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGW60H65DFB
IGBT Transistors STGW60H65DFB
IGBT Transistors 600V 60A trench gate field-stop IGBT

IGBT Transistors 600V 60A trench gate field-stop IGBT

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-STGW60H65DFB-ND 727289-STGW60H65DFB STGW60H65DFB 98Y2476 STGW60H65DFB STGW60H65DFB
Product Name Single IGBTs IGBTs - Single - STGW60H65DFB Single IGBTs Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-3; TO-247
Packing Method Tube Tube; Tube Tube; Tube
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