IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247-4
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Product overview: STGW60H65DFB-4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW60H65DFB-4 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1014357-STGW60H65DFB
Category: Discrete Semiconductor Products>Transistors
Series: HB
Package: Tube
Standard Package: 600
Power - Max: 375 W
Reverse Recovery Time (trr): 60 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Switching Energy: 346µJ (on), 1.161mJ (off)
Input Type: Standard
Gate Charge: 306 nC
Td (on/off) @ 25°C: 65ns/261ns
Test Condition: 400V, 60A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGW60
IGBT
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; RoHS Compliant: Yes
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-STGW60H65DFB-4-ND | 279-STGW60H65DFB-4 | 1014357-STGW60H65DFB-4 | STGW60H65DFB-4 | 33AC3217 | STGW60H65DFB-4 |
| Product Name | Single IGBTs | 650 V 60 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 80A, To-247; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; TO-247-4 | TO-247; SOT3 | TO-3; TO-247 | |||
| Packing Method | Tube | Tube; Tube |
