STMicroelectronics, Inc. IGBTs - Single - STGW50HF60SD STGW50HF60SD

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103067-STGW50HF60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 67ns Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 110A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 284W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.45V @ 15V, 30A Total Switching Energy(Ets): 250μJ (on), 4.2mJ (off) Turn-on and Turn-off delay time: 50ns/220ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Alternative Parts (Cross-Reference): AOK50B60D1; IXGH50N60B4; STGW50HF60SD; STGW50HF60S; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103067-STGW50HF60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 67ns Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 110A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 284W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.45V @ 15V, 30A Total Switching Energy(Ets): 250μJ (on), 4.2mJ (off) Turn-on and Turn-off delay time: 50ns/220ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Alternative Parts (Cross-Reference): AOK50B60D1; IXGH50N60B4; STGW50HF60SD; STGW50HF60S; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGW50HF60SD - 1103067-STGW50HF60SD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW50HF60SD
1103067-STGW50HF60SD
IGBTs - Single - STGW50HF60SD 1103067-STGW50HF60SD
Manufacturer: STMicroelectronics Win Source Part Number: 1103067-STGW50HF60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 67ns Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 110A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 284W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.45V @ 15V, 30A Total Switching Energy(Ets): 250μJ (on), 4.2mJ (off) Turn-on and Turn-off delay time: 50ns/220ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Alternative Parts (Cross-Reference): AOK50B60D1; IXGH50N60B4; STGW50HF60SD; STGW50HF60S; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103067-STGW50HF60SD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 67ns
Input Type: Standard
Gate Charge: 200nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 110A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 284W
Pulsed Collector Current: 130A
Collector-emitter saturation voltage(Max): 1.45V @ 15V, 30A
Total Switching Energy(Ets): 250μJ (on), 4.2mJ (off)
Turn-on and Turn-off delay time: 50ns/220ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): AOK50B60D1; IXGH50N60B4; STGW50HF60SD; STGW50HF60S;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - 497-11089-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-11089-5-ND
Single IGBTs 497-11089-5-ND
IGBT 600V 110A 284W Through Hole TO-247-3

IGBT 600V 110A 284W Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW50HF60SD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW50HF60SD
Discrete Semiconductor Products - Transistors - IGBTs STGW50HF60SD
IGBT 600V 110A 284W TO247

IGBT 600V 110A 284W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103067-STGW50HF60SD 497-11089-5-ND STGW50HF60SD
Product Name IGBTs - Single - STGW50HF60SD Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.45 volts
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