STMicroelectronics Single IGBTs STGW50HF60S

Description
IGBT 600V 110A 284W TO247
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Description
IGBT 600V 110A 284W TO247
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGW50HF60S - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW50HF60S
Single IGBTs STGW50HF60S
IGBT 600V 110A 284W TO247

IGBT 600V 110A 284W TO247

Supplier's Site
IGBTs - Single - STGW50HF60S - 1103066-STGW50HF60S - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW50HF60S
1103066-STGW50HF60S
IGBTs - Single - STGW50HF60S 1103066-STGW50HF60S
Manufacturer: STMicroelectronics Win Source Part Number: 1103066-STGW50HF60S Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 200nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 110A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 284W Pulsed Collector Current: 130A Collector-emitter saturation voltage(Max): 1.45V @ 15V, 30A Total Switching Energy(Ets): 250μJ (on), 4.2mJ (off) Turn-on and Turn-off delay time: 50ns/220ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Alternative Parts (Cross-Reference): AOK50B60D1; IXGH50N60B4; STGW50HF60SD; STGW50HF60S; Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103066-STGW50HF60S
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 200nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 110A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 284W
Pulsed Collector Current: 130A
Collector-emitter saturation voltage(Max): 1.45V @ 15V, 30A
Total Switching Energy(Ets): 250μJ (on), 4.2mJ (off)
Turn-on and Turn-off delay time: 50ns/220ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): AOK50B60D1; IXGH50N60B4; STGW50HF60SD; STGW50HF60S;
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now
Discrete Semiconductor Products - Transistors - IGBTs - STGW50HF60S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW50HF60S
Discrete Semiconductor Products - Transistors - IGBTs STGW50HF60S
IGBT 600V 110A 284W TO247

IGBT 600V 110A 284W TO247

Supplier's Site
IGBT 600V 110A 284W TO247 - 761-STGW50HF60S - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 110A 284W TO247
761-STGW50HF60S
IGBT 600V 110A 284W TO247 761-STGW50HF60S
IGBT 600V 110A 284W TO247

IGBT 600V 110A 284W TO247

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGW50HF60S 1103066-STGW50HF60S STGW50HF60S 761-STGW50HF60S
Product Name Single IGBTs IGBTs - Single - STGW50HF60S Discrete Semiconductor Products - Transistors - IGBTs IGBT 600V 110A 284W TO247
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3
VCE(on) 1.45 volts 1.15 volts
PD 284000 milliwatts 284000 milliwatts
Packing Method Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
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