50 A, 600 V field stop trench gate IGBT with Ultrafast diode Product overview: STGW50H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 50 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW50H60DF can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 100A 360W Through Hole TO-247-3
IGBT 600V 100A 360W TO247
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW50H60DF | 497-12423-ND | STGW50H60DF | 761-STGW50H60DF |
| Product Name | 50 A 600 V IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode |
| PD | 360000 milliwatts | 360000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-247; TO-247-3 | |||
| Packing Method | Tube | Tube; Tube | Tube; Tube | |
| Structure | Trench Field Stop |
