IGBT Trench Field Stop 600V 80A 283W Through Hole TO-247-3
IGBT 600V 80A 283W TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 1103062-STGW40V60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 41ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 226nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 283W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 456μJ (on), 411μJ (off)
Turn-on and Turn-off delay time: 52ns/208ns
Testing Conditions: 400V, 40A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGW40V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 283000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 283000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW40V60DF can be used for catalog matching and distributor lookup.
IGBT 600V 80A 283W TO247
IGBT Transistors 600V 40A High Speed Trench Gate IGBT
IGBT, SINGLE, 600V, 80A, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-13766-5-ND | STGW40V60DF | 1103062-STGW40V60DF | 279-STGW40V60DF | STGW40V60DF | STGW40V60DF | 45AC7606 |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - STGW40V60DF | 600V 80A 283000mW IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, Single, 600V, 80A, To-247; Continuous Collector Current Stmicroelectronics |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-3; TO-247 | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
