STMicroelectronics, Inc. Single IGBTs STGW40N120KD

Description
IGBT 1200V 80A 240W Through Hole TO-247-3
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Description
IGBT 1200V 80A 240W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - 497-10000-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-10000-5-ND
Single IGBTs 497-10000-5-ND
IGBT 1200V 80A 240W Through Hole TO-247-3

IGBT 1200V 80A 240W Through Hole TO-247-3

Buy Now Datasheet
IGBTs - Single - STGW40N120KD - 088826-STGW40N120KD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW40N120KD
088826-STGW40N120KD
IGBTs - Single - STGW40N120KD 088826-STGW40N120KD
Manufacturer: STMicroelectronics Win Source Part Number: 088826-STGW40N120KD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 84ns Input Type: Standard Gate Charge: 126nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 125°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 240W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 3.85V @ 15V, 30A Total Switching Energy(Ets): 3.7mJ (on), 5.7mJ (off) Turn-on and Turn-off delay time: 48ns/338ns Testing Conditions: 960V, 30A, 10 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 088826-STGW40N120KD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 84ns
Input Type: Standard
Gate Charge: 126nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 125°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 240W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 3.85V @ 15V, 30A
Total Switching Energy(Ets): 3.7mJ (on), 5.7mJ (off)
Turn-on and Turn-off delay time: 48ns/338ns
Testing Conditions: 960V, 30A, 10 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW40N120KD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW40N120KD
Discrete Semiconductor Products - Transistors - IGBTs STGW40N120KD
IGBT 1200V 80A 240W TO247

IGBT 1200V 80A 240W TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-10000-5-ND 088826-STGW40N120KD STGW40N120KD
Product Name Single IGBTs IGBTs - Single - STGW40N120KD Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
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