STMicroelectronics, Inc. Single IGBTs STGW40M120DF3

Description
IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3
  • Single IGBTs - 497-STGW40M120DF3-ND - DigiKey
    DigiKey
  • Single IGBTs - STGW40M120DF3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - STGW40M120DF3 - 212285-STGW40M120DF3 - Win Source Electronics
    Win Source Electronics
  • Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current Stmicroelectronics - 42Y1012 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGW40M120DF3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-STGW40M120DF3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-STGW40M120DF3-ND
Single IGBTs 497-STGW40M120DF3-ND
IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3

IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3

Buy Now Datasheet
Single IGBTs - STGW40M120DF3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW40M120DF3
Single IGBTs STGW40M120DF3
IGBT 1200V 80A 468W TO-247

IGBT 1200V 80A 468W TO-247

Supplier's Site Datasheet
IGBTs - Single - STGW40M120DF3 - 212285-STGW40M120DF3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW40M120DF3
212285-STGW40M120DF3
IGBTs - Single - STGW40M120DF3 212285-STGW40M120DF3
Manufacturer: STMicroelectronics Win Source Part Number: 212285-STGW40M120DF3 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 355ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 125nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 468W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A Total Switching Energy(Ets): 1.5mJ (on), 2.25mJ (off) Turn-on and Turn-off delay time: 35ns/140ns Testing Conditions: 600V, 40A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212285-STGW40M120DF3
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 355ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 125nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 468W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 1.5mJ (on), 2.25mJ (off)
Turn-on and Turn-off delay time: 35ns/140ns
Testing Conditions: 600V, 40A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current Stmicroelectronics - 42Y1012 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current Stmicroelectronics
42Y1012
Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current Stmicroelectronics 42Y1012
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:468W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes

IGBT, SINGLE, 1.2KV, 80A, TO-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:468W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGW40M120DF3
IGBT Transistors STGW40M120DF3
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW40M120DF3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW40M120DF3
Discrete Semiconductor Products - Transistors - IGBTs STGW40M120DF3
IGBT 1200V 80A 468W TO-247

IGBT 1200V 80A 468W TO-247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-STGW40M120DF3-ND STGW40M120DF3 212285-STGW40M120DF3 42Y1012 STGW40M120DF3 STGW40M120DF3
Product Name Single IGBTs Single IGBTs IGBTs - Single - STGW40M120DF3 Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) ? to 175 C (? to 347 F)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-3; TO-247
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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