Manufacturer: STMicroelectronics
Win Source Part Number: 212285-STGW40M120DF3
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 355ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 125nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 468W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 1.5mJ (on), 2.25mJ (off)
Turn-on and Turn-off delay time: 35ns/140ns
Testing Conditions: 600V, 40A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3
IGBT 1200V 80A 468W TO-247
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGW40M120DF3 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 80A, 468000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 80A, 468000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW40M120DF3 can be used for catalog matching and distributor lookup.
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:468W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes
IGBT 1200V 80A 468W TO-247
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 212285-STGW40M120DF3 | 497-STGW40M120DF3-ND | STGW40M120DF3 | 279-STGW40M120DF3 | STGW40M120DF3 | 42Y1012 | STGW40M120DF3 |
| Product Name | IGBTs - Single - STGW40M120DF3 | Single IGBTs | Single IGBTs | 1200V 80A 468000mW IGBT Transistor | IGBT Transistors | Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.3 volts | ||||||
| PD | 468000 milliwatts | 468000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) |
