Win Source Part Number: 969593-STGW40H65FB
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 283 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Switching Energy: 498mJ (on), 363mJ (off)
Input Type: Standard
Gate Charge: 210 nC
Td (on/off) @ 25°C: 40ns/142ns
Test Condition: 400V, 40A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-14036-5,497-140
Base Product Number: STGW40
IGBT 650V 80A 283W TO247
IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247-3
IGBT N-Ch 650V 40A High-Speed TO247
IGBT N-Ch 650V 40A High-Speed TO247
IGBT N-Ch 650V 40A High-Speed TO247
TRANSISTOR, IGBT, 650V, 80A, TO-247 ROHS COMPLIANT: YES
IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
IGBT 650V 80A 283W TO247
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 969593-STGW40H65FB | STGW40H65FB | 497-STGW40H65FB-ND | 7925805P | 47AK6963 | STGW40H65FB | STGW40H65FB |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | Single IGBTs | IGBTs | Transistor, Igbt, 650V, 80A, To-247 Rohs Compliant Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 650 volts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247 | TO-3; TO-247 | 160 A | |
| Packing Method | Tube | Tube; Tube |
