IGBT 650V 80A 283W TO-247
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube Product overview: STGW40H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 80A, 283000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 80A, 283000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW40H65DFB can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247
Manufacturer: STMicroelectronics
Win Source Part Number: 727288-STGW40H65DFB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 283W
Reverse Recovery Time (trr): 62ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 498μJ (on), 363μJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 40ns/142ns
Test Condition: 400V, 40A, 5 Ohm, 15V
Family Name: STGW40H65DFB
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 40A
Alternative Parts (Cross-Reference): FGH40N6S2; HGTG40N60C3; FGH40N6S2D;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
IGBT N-Ch 650V 40A High-Speed TO247
IGBT N-Ch 650V 40A High-Speed TO247
IGBT N-Ch 650V 40A High-Speed TO247
IGBT, SINGLE, 650V, 80A, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:283W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT 650V 80A 283W TO-247
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW40H65DFB | 279-STGW40H65DFB | 497-14365-ND | 727288-STGW40H65DFB | 7925795 | 7925795P | 45AC7605 | STGW40H65DFB |
| Product Name | Single IGBTs | 650V 80A 283000mW IGBT Transistor | Single IGBTs | IGBTs - Single - STGW40H65DFB | IGBTs | IGBTs | Igbt, Single, 650V, 80A, To-247; Continuous Collector Current Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; To-247 | TO-247; TO-247 | TO-3; TO-247 | ||
| PD | 283000 milliwatts | 283000 milliwatts | ||||||
| Packing Method | Tube | Tube; Tube | Tube; Tube |
