IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247-4
IGBT
IGBT, SINGLE, 650V, 80A, TO-247-4; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; RoHS Compliant: Yes
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-18295-ND | STGW40H65DFB-4 | 14AC7544 | STGW40H65DFB-4 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 80A, To-247-4; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
