Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Product overview: STGW40H120DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 40 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V, 40 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW40H120DF2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261047-STGW40H120DF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 468W
Reverse Recovery Time (trr): 488ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 1mJ (on), 1.32mJ (off)
Input Type: Standard
Gate Charge: 187nC
Td (on/off) @ 25°C: 18ns/152ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.6V @ 15V, 40A
Alternative Parts (Cross-Reference): HGTG5A30N120CN; HGTG30N120CN; HGTG27N120BN;
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3
IGBT 1200V 40A HS TO-247
IGBT 1200V 40A HS TO-247
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
IGBT, SINGLE, 1.2KV, 80A, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:468W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW40H120DF2 | 1261047-STGW40H120DF2 | 497-14715-5-ND | STGW40H120DF2 | STGW40H120DF2 | STGW40H120DF2 | 45AC7604 |
| Product Name | 1200 V 40 A IGBT Transistor | IGBTs - Single - STGW40H120DF2 | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, Single, 1.2Kv, 80A, To-247; Continuous Collector Current Stmicroelectronics |
| PD | 468000 milliwatts | 468000 milliwatts |
