600V 60A IGBT Transistor TO-247 Product overview: STGW30NC60WD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW30NC60WD can be used for catalog matching and distributor lookup.
IGBT 600V 60A 200W Through Hole TO-247-3
IGBT, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
IGBT Transistors PowerMESH" IGBT
IGBT 600V 60A 200W TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW30NC60WD | 497-5204-5-ND | 26M3562 | 761-STGW30NC60WD | STGW30NC60WD | STGW30NC60WD |
| Product Name | 600V 60A IGBT Transistor | Single IGBTs | Igbt, To-247; Continuous Collector Current Stmicroelectronics | STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; TO-247-3 | TO-3; TO-247 | ||||
| Packing Method | Tube | Tube; Tube | Tube; Tube | |||
| Polarity | N-Channel; N-CHANNEL |
