Trench gate field-stop IGBT M series, 650 V 30 A low loss Product overview: STGW30M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW30M65DF2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 60A 258W Through Hole TO-247-3
Win Source Part Number: 1277387-STGW30M65DF2
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 258 W
Reverse Recovery Time (trr): 140 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 300µJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 80 nC
Td (on/off) @ 25°C: 31.6ns/115ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16485-5
Base Product Number: STGW30
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
TRENCH GATE FIELD-STOP IGBT M SE
TRANSISTOR, IGBT, 650V, 60A, TO-247 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW30M65DF2 | 497-16485-5-ND | 1277387-STGW30M65DF2 | STGW30M65DF2 | STGW30M65DF2 | 47AK6961 |
| Product Name | 650 V 30 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics |
| TJ | -55 to 175 C (-67 to 347 F) |