Manufacturer: STMicroelectronics
Win Source Part Number: 795618-STGW30H65FB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 260W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 151μJ (on), 293μJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Family Name: STGW30H65FB
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 30A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 30A
Alternative Parts (Cross-Reference): MGY40N60; MGY40N60D; MGY40N60G; APT15GP60BG;
Introduction Date: January 30, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
IGBT Trench Field Stop 650V 30A 260W Through Hole TO-247
IGBT 650V 30A 260W TO-247
IGBT 650V 30A 260W TO-247
TRANSISTOR, IGBT, 650V, 60A, TO-247 ROHS COMPLIANT: YES
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 795618-STGW30H65FB | 497-14467-5-ND | STGW30H65FB | STGW30H65FB | 47AK6960 | STGW30H65FB |
| Product Name | IGBTs - Single - STGW30H65FB | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics | IGBT Transistors |
| VCES | 650 volts |
