STMicroelectronics, Inc. Single IGBTs STGW30H65FB

Description
IGBT Trench Field Stop 650V 30A 260W Through Hole TO-247
  • Single IGBTs - 497-14467-5-ND - DigiKey
    DigiKey
  • Single IGBTs - STGW30H65FB - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - STGW30H65FB - 795618-STGW30H65FB - Win Source Electronics
    Win Source Electronics
  • Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics - 47AK6960 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGW30H65FB - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 30A 260W Through Hole TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-14467-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-14467-5-ND
Single IGBTs 497-14467-5-ND
IGBT Trench Field Stop 650V 30A 260W Through Hole TO-247

IGBT Trench Field Stop 650V 30A 260W Through Hole TO-247

Buy Now Datasheet
Single IGBTs - STGW30H65FB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW30H65FB
Single IGBTs STGW30H65FB
IGBT 650V 30A 260W TO-247

IGBT 650V 30A 260W TO-247

Supplier's Site Datasheet
IGBTs - Single - STGW30H65FB - 795618-STGW30H65FB - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW30H65FB
795618-STGW30H65FB
IGBTs - Single - STGW30H65FB 795618-STGW30H65FB
Manufacturer: STMicroelectronics Win Source Part Number: 795618-STGW30H65FB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 260W IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 120A Switching Energy: 151μJ (on), 293μJ (off) Input Type: Standard Gate Charge: 149nC Td (on/off) @ 25°C: 37ns/146ns Test Condition: 400V, 30A, 10 Ohm, 15V Family Name: STGW30H65FB Categories: Discrete Semiconductor Products Manufacturer Package: TO-247 Current - Collector (Ic) (Maximum): 30A Voltage - Collector Emitter Breakdown (Maximum): 650V Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 30A Alternative Parts (Cross-Reference): MGY40N60; MGY40N60D; MGY40N60G; APT15GP60BG; Introduction Date: January 30, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 795618-STGW30H65FB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 260W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 151μJ (on), 293μJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Family Name: STGW30H65FB
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 30A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 30A
Alternative Parts (Cross-Reference): MGY40N60; MGY40N60D; MGY40N60G; APT15GP60BG;
Introduction Date: January 30, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics - 47AK6960 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics
47AK6960
Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics 47AK6960
TRANSISTOR, IGBT, 650V, 60A, TO-247 ROHS COMPLIANT: YES

TRANSISTOR, IGBT, 650V, 60A, TO-247 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGW30H65FB
IGBT Transistors STGW30H65FB
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW30H65FB - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW30H65FB
Discrete Semiconductor Products - Transistors - IGBTs STGW30H65FB
IGBT 650V 30A 260W TO-247

IGBT 650V 30A 260W TO-247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-14467-5-ND STGW30H65FB 795618-STGW30H65FB 47AK6960 STGW30H65FB STGW30H65FB
Product Name Single IGBTs Single IGBTs IGBTs - Single - STGW30H65FB Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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