STMicroelectronics, Inc. IGBTs STGW30H60DFB

Description
IGBT 600V 30A Trench Field-Stop TO-247
Request a Quote Datasheet
Description
IGBT 600V 30A Trench Field-Stop TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - 8607450 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
8607450
IGBTs 8607450
IGBT 600V 30A Trench Field-Stop TO-247

IGBT 600V 30A Trench Field-Stop TO-247

Supplier's Site
IGBTs - 8607450P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT 600V 30A Trench Field-Stop TO-247

IGBT 600V 30A Trench Field-Stop TO-247

Supplier's Site
IGBTs - 1688808 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1688808
IGBTs 1688808
IGBT 600V 30A Trench Field-Stop TO-247

IGBT 600V 30A Trench Field-Stop TO-247

Supplier's Site
IGBTs - Single - STGW30H60DFB - 143658-STGW30H60DFB - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW30H60DFB
143658-STGW30H60DFB
IGBTs - Single - STGW30H60DFB 143658-STGW30H60DFB
Manufacturer: STMicroelectronics Win Source Part Number: 143658-STGW30H60DFB Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 53ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 149nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2V @ 15V, 30A Total Switching Energy(Ets): 383μJ (on), 293μJ (off) Turn-on and Turn-off delay time: 37ns/146ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 143658-STGW30H60DFB
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 53ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 149nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 260W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Total Switching Energy(Ets): 383μJ (on), 293μJ (off)
Turn-on and Turn-off delay time: 37ns/146ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - STGW30H60DFB - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW30H60DFB
Single IGBTs STGW30H60DFB
IGBT 600V 60A 260W TO247

IGBT 600V 60A 260W TO247

Supplier's Site Datasheet
Single IGBTs - 497-15133-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-15133-5-ND
Single IGBTs 497-15133-5-ND
IGBT Trench Field Stop 600V 60A 260W Through Hole TO-247

IGBT Trench Field Stop 600V 60A 260W Through Hole TO-247

Buy Now Datasheet
Transistor - 110274321 - Radwell International
Willingboro, NJ, United States
Transistor
110274321
Transistor 110274321
IGBT, SINGLE, 600V, 60A, TO-247; DC COLLECTOR CURRENT:60A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):600V; POWER DISSIPATION PD:260W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:1.55V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:175C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

IGBT, SINGLE, 600V, 60A, TO-247; DC COLLECTOR CURRENT:60A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):600V; POWER DISSIPATION PD:260W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:1.55V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:175C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGW30H60DFB
IGBT Transistors STGW30H60DFB
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Buy Now Datasheet
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current Stmicroelectronics - 45AC7601 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current Stmicroelectronics
45AC7601
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current Stmicroelectronics 45AC7601
IGBT, SINGLE, 600V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:1.55V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

IGBT, SINGLE, 600V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:1.55V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW30H60DFB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW30H60DFB
Discrete Semiconductor Products - Transistors - IGBTs STGW30H60DFB
IGBT 600V 60A 260W TO247

IGBT 600V 60A 260W TO247

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 8607450 8607450P 143658-STGW30H60DFB STGW30H60DFB 497-15133-5-ND 110274321 STGW30H60DFB 45AC7601 STGW30H60DFB
Product Name IGBTs IGBTs IGBTs - Single - STGW30H60DFB Single IGBTs Single IGBTs Transistor IGBT Transistors Igbt, Single, 600V, 60A, To-247; Continuous Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
Package Type TO-247; To-247 TO-247; TO-247 TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
VCE(on) 2 volts
PD 260000 milliwatts 260000 milliwatts
Unlock Full Specs
to access all available technical data