IGBT 600V 60A 260W TO247
IGBT Trench Field Stop 600V 60A 260W Through Hole TO-247
IGBT, SINGLE, 600V, 60A, TO-247; DC COLLECTOR CURRENT:60A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):600V; POWER DISSIPATION PD:260W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:1.55V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:175C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT 600V 30A Trench Field-Stop TO-247
IGBT 600V 30A Trench Field-Stop TO-247
IGBT 600V 30A Trench Field-Stop TO-247
Manufacturer: STMicroelectronics
Win Source Part Number: 143658-STGW30H60DFB
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 53ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 149nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 260W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Total Switching Energy(Ets): 383μJ (on), 293μJ (off)
Turn-on and Turn-off delay time: 37ns/146ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
IGBT, SINGLE, 600V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:1.55V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT 600V 60A 260W TO247
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
| ODG (Origin Data Global) | DigiKey | Radwell International | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW30H60DFB | 497-15133-5-ND | 110274321 | 8607450 | 8607450P | 143658-STGW30H60DFB | 45AC7601 | STGW30H60DFB | STGW30H60DFB |
| Product Name | Single IGBTs | Single IGBTs | Transistor | IGBTs | IGBTs | IGBTs - Single - STGW30H60DFB | Igbt, Single, 600V, 60A, To-247; Continuous Collector Current Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-247; SOT3; TO-247 | TO-3; TO-247 | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | ||||||
| Structure | Trench Field Stop |
