600 V, 30 A high speed trench gate field-stop IGBT Product overview: STGW30H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW30H60DF can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261041-STGW30H60DF
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 110ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 350μJ (on), 400μJ (off)
Input Type: Standard
Gate Charge: 105nC
Test Condition: 400V, 30A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Status: Obsolete
Temperature Range - Operating: -40°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: Not Applicable
Maximum Power: 260W
Vce(on) (Maximum) at Vge, Ic: 2.4V at 15V, 30A
Td (on/off) at 25°C: 50ns/160ns
IGBT Trench Field Stop 600V 60A 260W Through Hole TO-247
IGBT 600V 60A 260W TO247
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGW30H60DF | 1261041-STGW30H60DF | 497-13764-5-ND | STGW30H60DF | STGW30H60DF |
| Product Name | 600 V 30 A IGBT Transistor | IGBTs - Single - STGW30H60DF | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| PD | 260000 milliwatts | ||||
| TJ | -40 C (-40 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||
| VCES | 600 volts |