IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247-3
IGBT H-SERIES 1200V 25A TO-247
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Product overview: STGW25H120F2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 25 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V, 25 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW25H120F2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 814433-STGW25H120F2
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 375W
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 100A
Switching Energy: 600μJ (on), 700μJ (off)
Input Type: Standard
Gate Charge: 100nC
Test Condition: 600V, 25A, 10Ohm, 15V
Supplier Device Package: TO-247
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 50A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.6V at 15V, 25A
Td (on/off) at 25°C: 29ns/130ns
Part Number Series: STGW25
IGBT H-SERIES 1200V 25A TO-247
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-14833-5-ND | STGW25H120F2 | 279-STGW25H120F2 | 814433-STGW25H120F2 | STGW25H120F2 | STGW25H120F2 |
| Product Name | Single IGBTs | Single IGBTs | 1200 V 25 A IGBT Transistor | IGBTs - Single - STGW25H120F2 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | |||
| Packing Method | Tube | Tube; Tube | Tube; Tube |
