STMicroelectronics, Inc. Single IGBTs STGW25H120DF2

Description
IGBT H-SERIES 1200V 25A TO-247
Request a Quote Datasheet
Description
IGBT H-SERIES 1200V 25A TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGW25H120DF2 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW25H120DF2
Single IGBTs STGW25H120DF2
IGBT H-SERIES 1200V 25A TO-247

IGBT H-SERIES 1200V 25A TO-247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277393-STGW25H120DF2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277393-STGW25H120DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277393-STGW25H120DF2
Win Source Part Number: 1277393-STGW25H120DF 2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 30 Power - Max: 375 W Reverse Recovery Time (trr): 303 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Switching Energy: 600µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 100 nC Td (on/off) @ 25°C: 29ns/130ns Test Condition: 600V, 25A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-14714-5,-497-147 14-5 Base Product Number: STGW25

Win Source Part Number: 1277393-STGW25H120DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 30
Power - Max: 375 W
Reverse Recovery Time (trr): 303 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Switching Energy: 600µJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 100 nC
Td (on/off) @ 25°C: 29ns/130ns
Test Condition: 600V, 25A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-14714-5,-497-14714-5
Base Product Number: STGW25

Buy Now Datasheet
Single IGBTs - 497-14714-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-14714-5-ND
Single IGBTs 497-14714-5-ND
IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247-3

IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW25H120DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW25H120DF2
Discrete Semiconductor Products - Transistors - IGBTs STGW25H120DF2
IGBT H-SERIES 1200V 25A TO-247

IGBT H-SERIES 1200V 25A TO-247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGW25H120DF2
IGBT Transistors STGW25H120DF2
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGW25H120DF2 1277393-STGW25H120DF2 497-14714-5-ND STGW25H120DF2 STGW25H120DF2
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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