STMicroelectronics IGBTs - Single - STGW25H120DF STGW25H120DF

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212282-STGW25H120DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 303ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 375W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 25A Total Switching Energy(Ets): 600μJ (on), 700μJ (off) Turn-on and Turn-off delay time: 29ns/130ns Testing Conditions: 600V, 25A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH30S130P; STGWS38IH130D; STGW28IH120DF; STGW25H120DF; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 212282-STGW25H120DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 303ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 375W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 25A Total Switching Energy(Ets): 600μJ (on), 700μJ (off) Turn-on and Turn-off delay time: 29ns/130ns Testing Conditions: 600V, 25A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH30S130P; STGWS38IH130D; STGW28IH120DF; STGW25H120DF; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Suppliers

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IGBTs - Single - STGW25H120DF - 212282-STGW25H120DF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW25H120DF
212282-STGW25H120DF
IGBTs - Single - STGW25H120DF 212282-STGW25H120DF
Manufacturer: STMicroelectronics Win Source Part Number: 212282-STGW25H120DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 303ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 375W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 25A Total Switching Energy(Ets): 600μJ (on), 700μJ (off) Turn-on and Turn-off delay time: 29ns/130ns Testing Conditions: 600V, 25A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH30S130P; STGWS38IH130D; STGW28IH120DF; STGW25H120DF; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212282-STGW25H120DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 303ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 25A
Total Switching Energy(Ets): 600μJ (on), 700μJ (off)
Turn-on and Turn-off delay time: 29ns/130ns
Testing Conditions: 600V, 25A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): FGH30S130P; STGWS38IH130D; STGW28IH120DF; STGW25H120DF;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 50A 1200V IGBT Transistor
279-STGW25H120DF
N-Channel 50A 1200V IGBT Transistor 279-STGW25H120DF
50A, 1200V, N-CHANNEL IGBT, TO-247, ROHS COMPLIANT PACKAGE-3 Product overview: STGW25H120DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 1200V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 50A, 1200V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW25H120DF can be used for catalog matching and distributor lookup.

50A, 1200V, N-CHANNEL IGBT, TO-247, ROHS COMPLIANT PACKAGE-3 Product overview: STGW25H120DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 1200V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 50A, 1200V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW25H120DF can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 212282-STGW25H120DF 279-STGW25H120DF
Product Name IGBTs - Single - STGW25H120DF N-Channel 50A 1200V IGBT Transistor
VCE(on) 2.6 volts
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