STMicroelectronics, Inc. Single IGBTs STGW20V60DF

Description
IGBT 600V 40A 167W TO247
Request a Quote Datasheet
Description
IGBT 600V 40A 167W TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGW20V60DF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGW20V60DF
Single IGBTs STGW20V60DF
IGBT 600V 40A 167W TO247

IGBT 600V 40A 167W TO247

Supplier's Site Datasheet
Corby, Northants, United Kingdom
IGBTs
7919374
IGBTs 7919374
IGBT Trench gate,600V 20A/100 deg,TO247

IGBT Trench gate,600V 20A/100 deg,TO247

Supplier's Site
Corby, Northants, United Kingdom
IGBT Trench gate,600V 20A/100 deg,TO247

IGBT Trench gate,600V 20A/100 deg,TO247

Supplier's Site
Corby, Northants, United Kingdom
IGBTs
1687074
IGBTs 1687074
IGBT Trench gate,600V 20A/100 deg,TO247

IGBT Trench gate,600V 20A/100 deg,TO247

Supplier's Site
IGBTs - Single - STGW20V60DF - 1041991-STGW20V60DF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW20V60DF
1041991-STGW20V60DF
IGBTs - Single - STGW20V60DF 1041991-STGW20V60DF
Manufacturer: STMicroelectronics Win Source Part Number: 1041991-STGW20V60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 40ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 116nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A Total Switching Energy(Ets): 200μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 38ns/149ns Testing Conditions: 400V, 20A, 15V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1041991-STGW20V60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 40ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 116nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A
Total Switching Energy(Ets): 200μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 38ns/149ns
Testing Conditions: 400V, 20A, 15V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - 497-13763-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13763-5-ND
Single IGBTs 497-13763-5-ND
IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247-3

IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW20V60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW20V60DF
Discrete Semiconductor Products - Transistors - IGBTs STGW20V60DF
IGBT 600V 40A 167W TO247

IGBT 600V 40A 167W TO247

Supplier's Site
Igbt, Single, 600V, 40A, To-247; Continuous Collector Current Stmicroelectronics - 45AC7600 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 600V, 40A, To-247; Continuous Collector Current Stmicroelectronics
45AC7600
Igbt, Single, 600V, 40A, To-247; Continuous Collector Current Stmicroelectronics 45AC7600
IGBT, SINGLE, 600V, 40A, TO-247; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

IGBT, SINGLE, 600V, 40A, TO-247; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGW20V60DF
IGBT Transistors STGW20V60DF
IGBT Transistors 600V 20A High Speed Trench Gate IGBT

IGBT Transistors 600V 20A High Speed Trench Gate IGBT

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) RS Components, Ltd. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGW20V60DF 7919374 1041991-STGW20V60DF 497-13763-5-ND STGW20V60DF 45AC7600 STGW20V60DF
Product Name Single IGBTs IGBTs IGBTs - Single - STGW20V60DF Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs Igbt, Single, 600V, 40A, To-247; Continuous Collector Current Stmicroelectronics IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) ? to 175 C (? to 347 F)
Package Type TO-247; TO-247-3 TO-247; TO-247 TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-3; TO-247
Polarity N-Channel
IC(max) 40 amps
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