Manufacturer: STMicroelectronics
Win Source Part Number: 1041991-STGW20V60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 40ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 116nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A
Total Switching Energy(Ets): 200μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 38ns/149ns
Testing Conditions: 400V, 20A, 15V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
IGBT Trench gate,600V 20A/100 deg,TO247
IGBT Trench gate,600V 20A/100 deg,TO247
IGBT Trench gate,600V 20A/100 deg,TO247
IGBT 600V 40A 167W TO247
IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247-3
IGBT Transistors 600V 20A High Speed Trench Gate IGBT
IGBT 600V 40A 167W TO247
IGBT, SINGLE, 600V, 40A, TO-247; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1041991-STGW20V60DF | 7919374 | STGW20V60DF | 497-13763-5-ND | STGW20V60DF | STGW20V60DF | 45AC7600 |
| Product Name | IGBTs - Single - STGW20V60DF | IGBTs | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 600V, 40A, To-247; Continuous Collector Current Stmicroelectronics |
| VCE(on) | 2.2 volts | ||||||
| PD | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |||
| Package Type | TO-247; SOT3; TO-247 | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 |
