STMicroelectronics, Inc. IGBTs - Single - STGW20H60DF STGW20H60DF

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212281-STGW20H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 209μJ (on), 261μJ (off) Turn-on and Turn-off delay time: 42.5ns/177ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 212281-STGW20H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 209μJ (on), 261μJ (off) Turn-on and Turn-off delay time: 42.5ns/177ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGW20H60DF - 212281-STGW20H60DF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGW20H60DF
212281-STGW20H60DF
IGBTs - Single - STGW20H60DF 212281-STGW20H60DF
Manufacturer: STMicroelectronics Win Source Part Number: 212281-STGW20H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 209μJ (on), 261μJ (off) Turn-on and Turn-off delay time: 42.5ns/177ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212281-STGW20H60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 115nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Total Switching Energy(Ets): 209μJ (on), 261μJ (off)
Turn-on and Turn-off delay time: 42.5ns/177ns
Testing Conditions: 400V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - 497-13958-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13958-5-ND
Single IGBTs 497-13958-5-ND
IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247

IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGW20H60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGW20H60DF
Discrete Semiconductor Products - Transistors - IGBTs STGW20H60DF
IGBT 600V 40A 167W TO247

IGBT 600V 40A 167W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGW20H60DF
IGBT Transistors STGW20H60DF
IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

Buy Now Datasheet
Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant Stmicroelectronics - 69AH2740 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant Stmicroelectronics
69AH2740
Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant Stmicroelectronics 69AH2740
IGBT, 600V, 40A, 175DEG C, 167W ROHS COMPLIANT: YES

IGBT, 600V, 40A, 175DEG C, 167W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 212281-STGW20H60DF 497-13958-5-ND STGW20H60DF STGW20H60DF 69AH2740
Product Name IGBTs - Single - STGW20H60DF Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant Stmicroelectronics
VCE(on) 2 volts
PD 167000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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