Manufacturer: STMicroelectronics
Win Source Part Number: 212281-STGW20H60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 115nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Total Switching Energy(Ets): 209μJ (on), 261μJ (off)
Turn-on and Turn-off delay time: 42.5ns/177ns
Testing Conditions: 400V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
IGBT Trench Field Stop 600V 40A 167W Through Hole TO-247
600 V, 20 A high speed trench gate field-stop IGBT Product overview: STGW20H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 20 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 20 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW20H60DF can be used for catalog matching and distributor lookup.
IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
IGBT, 600V, 40A, 175DEG C, 167W ROHS COMPLIANT: YES
IGBT 600V 40A 167W TO247
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 212281-STGW20H60DF | 497-13958-5-ND | 279-STGW20H60DF | STGW20H60DF | 69AH2740 | STGW20H60DF |
| Product Name | IGBTs - Single - STGW20H60DF | Single IGBTs | 600 V 20 A IGBT Transistor | IGBT Transistors | Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2 volts | |||||
| PD | 167000 milliwatts | 167000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
