TRENCH GATE FIELD-STOP IGBT M SE
IGBT Trench Field Stop 650V 20A 115W Through Hole TO-247-3
Win Source Part Number: 1096883-STGW10M65DF2
Category: Discrete Semiconductor Products>Transistors
Series: M
Package: Tube
Standard Package: 1,200
Power - Max: 115 W
Reverse Recovery Time (trr): 96 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 40 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Switching Energy: 120µJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 28 nC
Td (on/off) @ 25°C: 19ns/91ns
Test Condition: 400V, 10A, 22Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16969
Base Product Number: STGW10
IGBT Transistors PTD HIGH VOLTAGE
TRENCH GATE FIELD-STOP IGBT M SE
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW10M65DF2 | 497-16969-ND | 1096883-STGW10M65DF2 | STGW10M65DF2 | STGW10M65DF2 |
| Product Name | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
