TRENCH GATE FIELD-STOP IGBT M SE
Trench gate field-stop IGBT M series, 650 V 10 A low loss Product overview: STGW10M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 10 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 10 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGW10M65DF2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 20A 115W Through Hole TO-247-3
Win Source Part Number: 1096883-STGW10M65DF2
Category: Discrete Semiconductor Products>Transistors
Series: M
Package: Tube
Standard Package: 1,200
Power - Max: 115 W
Reverse Recovery Time (trr): 96 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 40 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Switching Energy: 120µJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 28 nC
Td (on/off) @ 25°C: 19ns/91ns
Test Condition: 400V, 10A, 22Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16969
Base Product Number: STGW10
IGBT Transistors PTD HIGH VOLTAGE
TRENCH GATE FIELD-STOP IGBT M SE
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGW10M65DF2 | 279-STGW10M65DF2 | 497-16969-ND | 1096883-STGW10M65DF2 | STGW10M65DF2 | STGW10M65DF2 |
| Product Name | Single IGBTs | 650 V 10 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |