STMicroelectronics, Inc. Single IGBTs STGP8NC60KD

Description
IGBT 600V 15A 65W Through Hole TO-220
Request a Quote Datasheet
Description
IGBT 600V 15A 65W Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-7481-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-7481-5-ND
Single IGBTs 497-7481-5-ND
IGBT 600V 15A 65W Through Hole TO-220

IGBT 600V 15A 65W Through Hole TO-220

Buy Now Datasheet
IGBTs - Single - STGP8NC60KD - 066385-STGP8NC60KD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGP8NC60KD
066385-STGP8NC60KD
IGBTs - Single - STGP8NC60KD 066385-STGP8NC60KD
Manufacturer: STMicroelectronics Win Source Part Number: 066385-STGP8NC60KD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 23.5ns Input Type: Standard Gate Charge: 19nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 65W Pulsed Collector Current: 30A Collector-emitter saturation voltage(Max): 2.75V @ 15V, 3A Total Switching Energy(Ets): 55μJ (on), 85μJ (off) Turn-on and Turn-off delay time: 17ns/72ns Testing Conditions: 390V, 3A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066385-STGP8NC60KD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 23.5ns
Input Type: Standard
Gate Charge: 19nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 65W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.75V @ 15V, 3A
Total Switching Energy(Ets): 55μJ (on), 85μJ (off)
Turn-on and Turn-off delay time: 17ns/72ns
Testing Conditions: 390V, 3A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - STGP8NC60KD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP8NC60KD
Single IGBTs STGP8NC60KD
IGBT 600V 15A 65W TO220

IGBT 600V 15A 65W TO220

Supplier's Site Datasheet
Transistor - 110295382 - Radwell International
Willingboro, NJ, United States
Transistor
110295382
Transistor 110295382
IGBT, 600V, 15A, TO-220; DC COLLECTOR CURRENT:15A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):2.2V; POWER DISSIPATION PD:65W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:600V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:150¦C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

IGBT, 600V, 15A, TO-220; DC COLLECTOR CURRENT:15A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):2.2V; POWER DISSIPATION PD:65W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:600V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:150¦C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Igbt, 600V, 15A, To-220; Continuous Collector Current Stmicroelectronics - 61AC2099 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 600V, 15A, To-220; Continuous Collector Current Stmicroelectronics
61AC2099
Igbt, 600V, 15A, To-220; Continuous Collector Current Stmicroelectronics 61AC2099
IGBT, 600V, 15A, TO-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:65W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes

IGBT, 600V, 15A, TO-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:65W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP8NC60KD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP8NC60KD
Discrete Semiconductor Products - Transistors - IGBTs STGP8NC60KD
IGBT 600V 15A 65W TO220

IGBT 600V 15A 65W TO220

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGP8NC60KD
IGBT Transistors STGP8NC60KD
IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET

IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-7481-5-ND 066385-STGP8NC60KD STGP8NC60KD 110295382 61AC2099 STGP8NC60KD STGP8NC60KD
Product Name Single IGBTs IGBTs - Single - STGP8NC60KD Single IGBTs Transistor Igbt, 600V, 15A, To-220; Continuous Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) ? to 150 C (? to 302 F) -55 to 150 C (-67 to 302 F)
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