IGBT 600V 15A 65W Through Hole TO-220
Trans IGBT Chip N-CH 600V 7A 65000mW 3-Pin(3+Tab) TO-220AB Tube Product overview: STGP8NC60KD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A, 65000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 7A, 65000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP8NC60KD can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 066385-STGP8NC60KD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 23.5ns
Input Type: Standard
Gate Charge: 19nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 65W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.75V @ 15V, 3A
Total Switching Energy(Ets): 55μJ (on), 85μJ (off)
Turn-on and Turn-off delay time: 17ns/72ns
Testing Conditions: 390V, 3A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
IGBT 600V 15A 65W TO220
IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
IGBT, 600V, 15A, TO-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:65W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
IGBT, 600V, 15A, TO-220; DC COLLECTOR CURRENT:15A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):2.2V; POWER DISSIPATION PD:65W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:600V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:150¦C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 497-7481-5-ND | STGP8NC60KD | 279-STGP8NC60KD | 066385-STGP8NC60KD | STGP8NC60KD | STGP8NC60KD | 61AC2099 | 110295382 |
| Product Name | Single IGBTs | Single IGBTs | 600V 7A 65000mW IGBT Transistor | IGBTs - Single - STGP8NC60KD | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, 600V, 15A, To-220; Continuous Collector Current Stmicroelectronics | Transistor |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
