IGBT Trench Field Stop 650V 8A 68W Through Hole TO-220
Trench gate field-stop IGBT, M series 650 V, 4 A low loss Product overview: STGP4M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 4 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 4 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP4M65DF2 can be used for catalog matching and distributor lookup.
IGBT M SERIES 650V 4A LOW LOSS
Win Source Part Number: 1277360-STGP4M65DF2
Category: Discrete Semiconductor Products>Transistors
Series: M
Package: Tube
Standard Package: 50
Power - Max: 68 W
Reverse Recovery Time (trr): 133 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 8 A
Current - Collector Pulsed (Icm): 16 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Switching Energy: 40µJ (on), 136µJ (off)
Input Type: Standard
Gate Charge: 15.2 nC
Td (on/off) @ 25°C: 12ns/86ns
Test Condition: 400V, 4A, 47Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-17548,-1138-STGP
Base Product Number: STGP4
IGBT M SERIES 650V 4A LOW LOSS
IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors Trench Gate IGBT M Series 650V 4A
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-17548-ND | 279-STGP4M65DF2 | STGP4M65DF2 | 1277360-STGP4M65DF2 | STGP4M65DF2 | 14AC7540 | STGP4M65DF2 |
| Product Name | Single IGBTs | 650 V 4 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 8A, To-220-3; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
