STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single STGP4M65DF2

Description
Win Source Part Number: 1277360-STGP4M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 50 Power - Max: 68 W Reverse Recovery Time (trr): 133 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 8 A Current - Collector Pulsed (Icm): 16 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Switching Energy: 40µJ (on), 136µJ (off) Input Type: Standard Gate Charge: 15.2 nC Td (on/off) @ 25°C: 12ns/86ns Test Condition: 400V, 4A, 47Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-17548,-1138-STGP 4M65DF2 Base Product Number: STGP4
  • Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277360-STGP4M65DF2 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - 497-17548-ND - DigiKey
    DigiKey
  • Single IGBTs - STGP4M65DF2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Igbt, Single, 650V, 8A, To-220-3; Dc Collector Current Stmicroelectronics - 14AC7540 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGP4M65DF2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1277360-STGP4M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 50 Power - Max: 68 W Reverse Recovery Time (trr): 133 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 8 A Current - Collector Pulsed (Icm): 16 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Switching Energy: 40µJ (on), 136µJ (off) Input Type: Standard Gate Charge: 15.2 nC Td (on/off) @ 25°C: 12ns/86ns Test Condition: 400V, 4A, 47Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-17548,-1138-STGP 4M65DF2 Base Product Number: STGP4
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277360-STGP4M65DF2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277360-STGP4M65DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277360-STGP4M65DF2
Win Source Part Number: 1277360-STGP4M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 50 Power - Max: 68 W Reverse Recovery Time (trr): 133 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 8 A Current - Collector Pulsed (Icm): 16 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Switching Energy: 40µJ (on), 136µJ (off) Input Type: Standard Gate Charge: 15.2 nC Td (on/off) @ 25°C: 12ns/86ns Test Condition: 400V, 4A, 47Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-17548,-1138-STGP 4M65DF2 Base Product Number: STGP4

Win Source Part Number: 1277360-STGP4M65DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: M
Package: Tube
Standard Package: 50
Power - Max: 68 W
Reverse Recovery Time (trr): 133 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 8 A
Current - Collector Pulsed (Icm): 16 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Switching Energy: 40µJ (on), 136µJ (off)
Input Type: Standard
Gate Charge: 15.2 nC
Td (on/off) @ 25°C: 12ns/86ns
Test Condition: 400V, 4A, 47Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-17548,-1138-STGP4M65DF2
Base Product Number: STGP4

Buy Now Datasheet
Single IGBTs - 497-17548-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-17548-ND
Single IGBTs 497-17548-ND
IGBT Trench Field Stop 650V 8A 68W Through Hole TO-220

IGBT Trench Field Stop 650V 8A 68W Through Hole TO-220

Buy Now Datasheet
Single IGBTs - STGP4M65DF2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP4M65DF2
Single IGBTs STGP4M65DF2
IGBT M SERIES 650V 4A LOW LOSS

IGBT M SERIES 650V 4A LOW LOSS

Supplier's Site Datasheet
Igbt, Single, 650V, 8A, To-220-3; Dc Collector Current Stmicroelectronics - 14AC7540 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 650V, 8A, To-220-3; Dc Collector Current Stmicroelectronics
14AC7540
Igbt, Single, 650V, 8A, To-220-3; Dc Collector Current Stmicroelectronics 14AC7540
IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGP4M65DF2
IGBT Transistors STGP4M65DF2
IGBT Transistors Trench Gate IGBT M Series 650V 4A

IGBT Transistors Trench Gate IGBT M Series 650V 4A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP4M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP4M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGP4M65DF2
IGBT M SERIES 650V 4A LOW LOSS

IGBT M SERIES 650V 4A LOW LOSS

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1277360-STGP4M65DF2 497-17548-ND STGP4M65DF2 14AC7540 STGP4M65DF2 STGP4M65DF2
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Single IGBTs Igbt, Single, 650V, 8A, To-220-3; Dc Collector Current Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
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