STMicroelectronics, Inc. Single IGBTs STGP30V60F

Description
IGBT 600V 60A 260W TO220AB
Request a Quote
Description
IGBT 600V 60A 260W TO220AB
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IGBT, Single, 600V, 60A, TO-220 from STMicroelectronics is designed for high-performance applications requiring efficient power management. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 60A at a case temperature of 25¬8C, which reduces to 30A at 100¬8C. The device has a typical collector-emitter saturation voltage (Vce(on)) of 1.85V at 30A, allowing for effective conduction with minimized losses. This IGBT utilizes a trench gate field-stop structure, optimizing the balance between conduction and switching losses, making it suitable for very high-frequency converters. It supports safe paralleling due to its positive Vce(sat) temperature coefficient and tight parameter distribution. The maximum junction temperature is rated at 175¬8C, and it has a total power dissipation capability of 260W. The device is packaged in a TO-220 case style, which is compatible with various thermal management solutions. Applications for this IGBT include photovoltaic inverters, uninterruptible power supplies, welding equipment, and power factor correction systems. Its robust specifications make it a viable option for engineers looking for reliable performance in demanding environments.

Datasheet Summary
Powered by GS/AI

The IGBT, Single, 600V, 60A, TO-220 from STMicroelectronics is designed for high-performance applications requiring efficient power management. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 60A at a case temperature of 25¬8C, which reduces to 30A at 100¬8C. The device has a typical collector-emitter saturation voltage (Vce(on)) of 1.85V at 30A, allowing for effective conduction with minimized losses. This IGBT utilizes a trench gate field-stop structure, optimizing the balance between conduction and switching losses, making it suitable for very high-frequency converters. It supports safe paralleling due to its positive Vce(sat) temperature coefficient and tight parameter distribution. The maximum junction temperature is rated at 175¬8C, and it has a total power dissipation capability of 260W. The device is packaged in a TO-220 case style, which is compatible with various thermal management solutions. Applications for this IGBT include photovoltaic inverters, uninterruptible power supplies, welding equipment, and power factor correction systems. Its robust specifications make it a viable option for engineers looking for reliable performance in demanding environments.

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGP30V60F - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP30V60F
Single IGBTs STGP30V60F
IGBT 600V 60A 260W TO220AB

IGBT 600V 60A 260W TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGP30V60F
IGBT Transistors STGP30V60F
IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop

IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop

Buy Now Datasheet
Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics - 61AC2098 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics
61AC2098
Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics 61AC2098
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP30V60F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP30V60F
Discrete Semiconductor Products - Transistors - IGBTs STGP30V60F
IGBT 600V 60A 260W TO220AB

IGBT 600V 60A 260W TO220AB

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGP30V60F STGP30V60F 61AC2098 STGP30V60F
Product Name Single IGBTs IGBT Transistors Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data