IGBT 600V 60A 258W TO220AB
IGBT Trench Field Stop 600V 60A 258W Through Hole TO-220
Win Source Part Number: 993519-STGP30V60DF
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 50
Power - Max: 258 W
Reverse Recovery Time (trr): 53 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Switching Energy: 383µJ (on), 233µJ (off)
Input Type: Standard
Gate Charge: 163 nC
Td (on/off) @ 25°C: 45ns/189ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-13762-5,497-137
Base Product Number: STGP30
Product Status: Obsolete
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Product overview: STGP30V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP30V60DF can be used for catalog matching and distributor lookup.
IGBT 600V 60A 258W TO220AB
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGP30V60DF | 497-13762-5-ND | 993519-STGP30V60DF | 279-STGP30V60DF | STGP30V60DF | 61AC2097 | STGP30V60DF |
| Product Name | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | 600 V 30 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | |||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | TO-3; TO-220 | |||
| Packing Method | Tube | Tube; Tube |