STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single STGP30V60DF

Description
Win Source Part Number: 993519-STGP30V60DF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 50 Power - Max: 258 W Reverse Recovery Time (trr): 53 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Switching Energy: 383µJ (on), 233µJ (off) Input Type: Standard Gate Charge: 163 nC Td (on/off) @ 25°C: 45ns/189ns Test Condition: 400V, 30A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-13762-5,497-137 62-5 Base Product Number: STGP30 Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - IGBTs - Single - 993519-STGP30V60DF - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - 497-13762-5-ND - DigiKey
    DigiKey
  • Single IGBTs - STGP30V60DF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics - 61AC2097 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGP30V60DF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 993519-STGP30V60DF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 50 Power - Max: 258 W Reverse Recovery Time (trr): 53 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Switching Energy: 383µJ (on), 233µJ (off) Input Type: Standard Gate Charge: 163 nC Td (on/off) @ 25°C: 45ns/189ns Test Condition: 400V, 30A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-13762-5,497-137 62-5 Base Product Number: STGP30 Product Status: Obsolete
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single - 993519-STGP30V60DF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
993519-STGP30V60DF
Discrete Semiconductor Products - Transistors - IGBTs - Single 993519-STGP30V60DF
Win Source Part Number: 993519-STGP30V60DF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 50 Power - Max: 258 W Reverse Recovery Time (trr): 53 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Switching Energy: 383µJ (on), 233µJ (off) Input Type: Standard Gate Charge: 163 nC Td (on/off) @ 25°C: 45ns/189ns Test Condition: 400V, 30A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-13762-5,497-137 62-5 Base Product Number: STGP30 Product Status: Obsolete

Win Source Part Number: 993519-STGP30V60DF
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 50
Power - Max: 258 W
Reverse Recovery Time (trr): 53 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Switching Energy: 383µJ (on), 233µJ (off)
Input Type: Standard
Gate Charge: 163 nC
Td (on/off) @ 25°C: 45ns/189ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-13762-5,497-13762-5
Base Product Number: STGP30
Product Status: Obsolete

Buy Now Datasheet
Single IGBTs - 497-13762-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13762-5-ND
Single IGBTs 497-13762-5-ND
IGBT Trench Field Stop 600V 60A 258W Through Hole TO-220

IGBT Trench Field Stop 600V 60A 258W Through Hole TO-220

Buy Now Datasheet
Single IGBTs - STGP30V60DF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP30V60DF
Single IGBTs STGP30V60DF
IGBT 600V 60A 258W TO220AB

IGBT 600V 60A 258W TO220AB

Supplier's Site Datasheet
Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics - 61AC2097 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics
61AC2097
Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics 61AC2097
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP30V60DF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP30V60DF
Discrete Semiconductor Products - Transistors - IGBTs STGP30V60DF
IGBT 600V 60A 258W TO220AB

IGBT 600V 60A 258W TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGP30V60DF
IGBT Transistors STGP30V60DF
IGBT Transistors 600V 30A High Speed Trench Gate IGBT

IGBT Transistors 600V 30A High Speed Trench Gate IGBT

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 993519-STGP30V60DF 497-13762-5-ND STGP30V60DF 61AC2097 STGP30V60DF STGP30V60DF
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Single IGBTs Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
VCES 600 volts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
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