Trench gate field-stop IGBT M series, 650 V 30 A low loss Product overview: STGP30M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP30M65DF2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 60A 258W Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 898000-STGP30M65DF2
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 60 A 258 W Through Hole TO-220
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: STGP30
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -497-15841-5, 497-15841-5
STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
IGBT 650V 30A TO-220AB
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGP30M65DF2 | 497-15841-5-ND | 898000-STGP30M65DF2 | STGP30M65DF2 | 761-STGP30M65DF2 | STGP30M65DF2 | STGP30M65DF2 |
| Product Name | 650 V 30 A IGBT Transistor | Single IGBTs | IGBTs - Single - STGP30M65DF2 | Single IGBTs | STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | ||||
| Packing Method | Tube | Tube; Tube | Tube; Tube | ||||
| Structure | Trench Field Stop |
