TRENCH GATE FIELD-STOP IGBT, HB
Manufacturer: STMicroelectronics
Win Source Part Number: 1261034-STGP30H60DFB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Power - Max: 260W
Reverse Recovery Time (trr): 53ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 383μJ (on), 293μJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Family Name: STGP30H60DFB
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 30A
Alternative Parts (Cross-Reference): IRG4BC40SPbF; IRG4BC40FPbF; IRGB4062D;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
IGBT Trench Field Stop 600V 60A 260W Through Hole TO-220
Trench gate field-stop 600 V, 30 A high speed HB series IGBT Product overview: STGP30H60DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP30H60DFB can be used for catalog matching and distributor lookup.
TRENCH GATE FIELD-STOP IGBT, HB
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGP30H60DFB | 1261034-STGP30H60DFB | 497-16483-5-ND | 279-STGP30H60DFB | STGP30H60DFB | 61AC2096 | STGP30H60DFB |
| Product Name | Single IGBTs | IGBTs - Single - STGP30H60DFB | Single IGBTs | 600 V 30 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 600V, 60A, To-220; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |